Epitaxial growth of CeO sub 2 layers on silicon

Journal Article · Mon Apr 02 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103202· OSTI ID:6949136

Inoue, T ^[1]; Yamamoto, Y; Koyama, S ^[2]; Suzuki, S; Ueda, Y ^[3]

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1. Department of Electronic Engineering, College of Science, Iwaki Meisei Univeristy, 5-5-1Iino-Chuodai, Iwaki, fukushima 970 (Japan) Engineering, Iwaki Meisei University, 5-5-1 Iino-Chuodai, Iwaki, Fukushima 970, Japan (JP)
2. Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184, Japan (JP)
3. Advanced Materials Laboratory, Inc., 4-1-8 Yoshimachi, Soka, Saitama 340, Japan (JP)

CeO{sub 2} layer was epitaxially grown for the first time on both (111) and (100) silicon substrates by vacuum evaporation. Characterization using Rutherford backscattering and reflection high-energy electron diffraction proved that a CeO{sub 2} layer on (111) Si has considerably good crystalline quality, whereas that on (100)Si contains a large amount of crystallographic defects, especially in the vicinity of the CeO{sub 2}/Si interface. Auger electron spectroscopy analysis showed a uniform concentration distribution of Ce and O throughout the epitaxial layer.

• OSTI ID: 6949136
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:14; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
BEAMS
CERIUM COMPOUNDS
CERIUM OXIDES
CHALCOGENIDES
CRYSTALLOGRAPHY
DEPOSITION
ELECTRON BEAMS
ELEMENTS
ENERGY BEAM DEPOSITION
EPITAXY
EVAPORATION
LEPTON BEAMS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHASE TRANSFORMATIONS
RARE EARTH COMPOUNDS
SEMIMETALS
SILICON
SORPTIVE PROPERTIES
SURFACE COATING
SURFACE PROPERTIES
VACUUM EVAPORATION