Low-temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates
- Department of Electronic Engineering, College of Science and Engineering, Iwaki Meisei University, 5-5-1 Iino-Chuodai, Iwaki, Fukushima 970, Japan (JP)
- Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184, Japan (JP)
The temperature dependence of the epitaxial growth of cerium dioxide (CeO{sub 2}) layers on (111) silicon substrates was studied using ultra-high-vacuum evaporation, varying the substrate temperature in the range between 150 and 900 {degree}C. Characterization using Rutherford backscattering spectrometry and reflection high-energy electron diffraction proved that a CeO{sub 2} layer on (111) silicon has considerably good crystalline quality in the range between 200 and 850 {degree}C. It is clarified that the epitaxy can be attained even at surprisingly low temperatures (less than 200 {degree}C). A substrate temperature above 850 {degree}C leads to rather poor crystallinity due to an exponential increase of residual gas pressure. Refractive indices of the epitaxial layers were measured by ellipsometry to be in the range of 2.19--2.79.
- OSTI ID:
- 5593534
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:12; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CERIUM COMPOUNDS
CERIUM OXIDES
CHALCOGENIDES
ELEMENTS
ELLIPSOMETRY
EPITAXY
EVAPORATION
MEASURING METHODS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
RARE EARTH COMPOUNDS
REFLECTIVITY
SEMIMETALS
SILICON
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
VACUUM EVAPORATION
VAPOR PHASE EPITAXY