Violet/blue emission from epitaxial cerium oxide films on silicon substrates

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118658· OSTI ID:526479

Morshed, A H; Moussa, M E; Bedair, S M ^[1]; Leonard, R; Liu, S X; El-Masry, N ^[2]

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1. Electrical and Computer Engineering Department, North Carolina State University, NCSU, Raleigh, North Carolina 27695 (United States)
2. Materials Science and Engineering Department, North Carolina State University, NCSU, Raleigh, North Carolina 27695 (United States)

Violet/blue photoluminescence was observed from epitaxial cerium oxide films on silicon substrates. The films were deposited on silicon (111) substrates under ultrahigh vacuum conditions using pulsed laser ablation of a cerium oxide target and treated by rapid thermal annealing in argon. High resolution transmission electron microscopy and x-ray diffraction measurements indicated the formation of a single crystal cerium oxide phase Ce{sub 6}O{sub 11} different from CeO{sub 2} in the annealed films. The emission might be due to charge transfer transitions from the 4f band to the valence band of the oxide. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526479
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CERIUM OXIDES
CRYSTAL DEFECTS
DEPOSITION
EPITAXY
LASER RADIATION
PHASE STUDIES
PHOTOLUMINESCENCE
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION