Electrical and structural properties of annealed epitaxial CeO{sub 2} films on Si(111) substrates

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:392160

Morshed, A H; Tomita, M; El-Masry, N; McLarty, P; Bedair, S M ^[1]; Parikh, N P ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States). Electrical and Computer Engineering Dept.
2. Univ. of North Carolina, Chapel Hill, NC (United States). Dept. of Physics and Astronomy

Epitaxial CeO{sub 2} films were grown on Si(111) substrates by laser ablation of CeO{sub 2} targets under UHV conditions. The as-grown films were found to have poor electrical properties due to the presence of a large amount of defects near the oxide-silicon interface. Improved MOS electrical characteristics were obtained by annealing in an O{sub 2} environment. This however resulted in the growth of a SiO{sub 2} layer that can be 10 nm thick at the silicon interface which will thus reduce the capacitance of the grown structure. Annealing in argon and argon followed by oxygen environments were investigated as means to reduce the defects while minimizing the intermediate SiO{sub 2} layer thickness. The annealed films were compared based on their RBS yields, breakdown voltages and capacitance-voltage characteristics. Growth and annealing conditions were optimized to achieve device quality MOS structures.

• OSTI ID: 392160
• Report Number(s): CONF-951155--; ISBN 1-55899-304-5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ANNEALING
ARGON
CERIUM OXIDES
DEFECTS
ELECTRICAL PROPERTIES
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
INTERFACES
MATERIALS
MEMORY DEVICES
OXYGEN
RUTHERFORD SCATTERING
SILICON
SILICON OXIDES
TIME DEPENDENCE