Structural and electrical properties of Ge nanocrystals embedded in SiO{sub 2} by ion implantation and annealing

Journal Article · Sun May 15 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1909286· OSTI ID:20709673

Duguay, S; Grob, J J; Slaoui, A; Le Gall, Y; Amann-Liess, M ^[1]

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1. Institut d'Electronique du Solide et des Systemes (InESS), 23 rue du Loess-BP 20-67037 Strasbourg Cedex 2 (France)

Silicon dioxide (SiO{sub 2}) on Si layers with embedded germanium nanocrystals (Ge-ncs) were fabricated using Ge{sup +} implantation and subsequent annealing. Transmission electron microscopy and Rutherford backscattering spectrometry have been used to study the Ge redistribution in the SiO{sub 2} films as a function of annealing temperature. A monolayer of Ge-ncs near the Si/SiO{sub 2} interface was formed under specific annealing conditions. This layer, with a nc density and mean size measured to be, respectively, 1.1x10{sup 12}/cm{sup 2} and 5 nm, is located at approximately 4 nm from the Si/SiO{sub 2} interface. Capacitance-voltage measurements were performed on metal-oxide-semiconductor structures containing such implanted SiO{sub 2} layers in order to study their electrical properties. The results indicate a strong memory effect at relatively low programming voltages (<5 V) due to the presence of Ge-ncs near the Si/SiO{sub 2} interface.

• OSTI ID: 20709673
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CAPACITANCE
ELECTRIC POTENTIAL
FILMS
GERMANIUM
GERMANIUM IONS
INTERFACES
ION IMPLANTATION
LAYERS
NANOSTRUCTURES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TRANSMISSION ELECTRON MICROSCOPY