Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation

Journal Article · Wed Oct 07 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4932151· OSTI ID:22492776

Pandey, Avinash C. ^[1]; Gerlach, J. W.; Lotnyk, A.; Rauschenbach, B. ^[2]; Karl, H. ^[3]; Ojha, S.; Avasthi, D. K.; Kanjilal, D. ^[4]

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1. Nanotechnology Application Centre, University of Allahabad, Allahabad 211 002 (India)
2. Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, D-04318 Leipzig (Germany)
3. Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)
4. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

200 nm thick SiO{sub 2} layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO{sub 2} matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.

• OSTI ID: 22492776
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ANNEALING
GERMANIUM IONS
LAYERS
MASS SPECTROSCOPY
NANOSTRUCTURES
RAMAN EFFECT
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON OXIDES
SUBSTRATES
TIME-OF-FLIGHT METHOD
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION