Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films
- Department of Physics, University of Allahabad, Allahabad 211002 (India)
- Leibniz-Institut fuer Oberflaechenmodifizierung, Permoserstrasse 15, D-04318 Leipzig (Germany)
- Institut fuer Physik, Universitaet Augsburg, D-86135 Augsburg (Germany)
- Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing.
- OSTI ID:
- 21137369
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANNEALING
COBALT IONS
CRYSTAL STRUCTURE
EPITAXY
GALLIUM NITRIDES
HEAVY IONS
ION IMPLANTATION
KEV RANGE 100-1000
MASS SPECTRA
MASS SPECTROSCOPY
MEV RANGE 100-1000
NEUTRON DIFFRACTION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILVER IONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
TIME DEPENDENCE
X-RAY DIFFRACTION