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Epitaxial Y sub 1 Ba sub 2 Cu sub 3 O sub 7 thin films on CeO sub 2 buffer layers on sapphire substrates

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.349166· OSTI ID:5294040
;  [1]
  1. National Research Council of Canada, Ottawa (Canada)
Pulsed laser deposition has been used to deposit Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} layer on CeO{sub 2} buffer layers on (1102) sapphire. Both layers are epitaxial with the {l angle}110{r angle} direction of the CeO{sub 2} layer aligned with the {l angle}2021{r angle} direction of the sapphire substrate. The {ital c}-axis Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} layer has its {l angle}100{r angle} direction alligned with the {l angle}110{r angle} direction of the CeO{sub 2}. Cross-sectional transmission electron microscopy shows the epitaxy to be coherent and the interfaces to be abrupt at an atomic level. The best films have a critical current of 9 {times} 10{sup 6} A/cm{sup 2} at 4.2 K and lower microwave surface resistance than copper at 77 K and at a frequency of 31 GHz.
OSTI ID:
5294040
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:7; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English