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Buffer layers for high-T[sub c] thin films on sapphire

Journal Article · · Journal of Superconductivity; (United States)
DOI:https://doi.org/10.1007/BF00618135· OSTI ID:7275385
; ; ;  [1];  [2]; ; ;  [3]
  1. Los Alamos National Lab., NM (United States)
  2. Neocera, Inc., College Park, MD (United States)
  3. David Sarnoff Research Center, Princeton, NJ (United States)

Buffer layers of various oxides including CeO[sub 2] and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta]] (YBCO) thin films. An ion beam channeling minimum yield of [approximately]3% was obtained in the CeO[sub 2] layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO[sub 2] was found to be the best one for YBCO thin films on R-plane sapphire. High T[sub c] and J[sub c] were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were approximately 4 m[Omega] at 77 K and 25 GHz. 19 refs., 10 figs.

OSTI ID:
7275385
Journal Information:
Journal of Superconductivity; (United States), Journal Name: Journal of Superconductivity; (United States) Vol. 5:4; ISSN JOUSEH; ISSN 0896-1107
Country of Publication:
United States
Language:
English