MBE groth of InAsSb strained-layer superlattices

Conference · Wed Dec 31 23:00:00 EST 1986

OSTI ID:6093227

Dawson, L R

The use of tensile strain parallel to (100) interfaces in InAs/sub x/Sb/sub 1-x/ strained-layer superlattices (SLSs) has been used to reduce the energy gap below that of unstrained alloys. Dislocation-free SLSs with x = .10 have been prepared. Cracking in structures with x > .10 has been overcome by the initial growth of a severely mismatched InAs/sub.35/Sb/sub .65/ buffer layer, followed by compressively strained InAs/sub .27/Sb/sub .73/ and InAs/sub .20/Sb/sub .80/ buffer layers. SLSs with x = .20 show substantial dislocation filtering and significant optical absorption at wavelengths beyond that of equivalent bulk alloys. 6 refs., 5 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6093227
• Report Number(s): SAND-87-1239C; CONF-8709133-1; ON: DE88000365
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ABSORPTIVITY
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CRACKS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DISLOCATIONS
ENERGY GAP
EPITAXY
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
LINE DEFECTS
MATERIALS
MECHANICAL PROPERTIES
MOLECULAR BEAM EPITAXY
OPTICAL ACTIVITY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
STRAINS
SUPERLATTICES
TENSILE PROPERTIES