MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy
Using atomic force microscopy (AFM), the authors have investigated the effects of growth temperature and dopant incorporation on the surface morphology of MBE grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlAs/GaAs and InAsSb/InSb material systems. The AFM results show quantitatively that over the temperature range from 380 to 545 C, graded in{sub x}Al{sub 1{minus}x}As(x = 0.05 {minus} 0.32) buffer layers grown at high temperatures ({approximately}520 C), and graded In{sub x}Ga{sub 1{minus}x}As (x = 0.05 {minus} 0.33) buffer layers and In{sub 0.4}Ga{sub 0.6}As/In{sub 0.26}Al{sub 0.35}Ga{sub 0.39}As SLSs grown at low temperatures ({approximately}400 C) have the lowest RMS roughness. Also, for SLSs InAs{sub 0.21}Sb{sub 0.79}/InSb, undoped layers grown at 470 C were smoother than undoped layers grown at 420 C and Be-doped layers grown at 470 C. These results illustrate the role of surface tension in the growth of strained layer materials near the melting temperature of the InAs{sub x}Sb{sub {minus}x}/InSb superlattice. Nomarski interference and transmission electron microscopies, IR photoluminescence, x-ray diffraction, and photocurrent spectroscopy were also used to evaluate the relative quality of the material but usually, the results were not conclusive.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10194922
- Report Number(s):
- SAND-93-1126C; CONF-9311104-12; ON: DE94002931; BR: GB0103012; TRN: AHC29315%%19
- Resource Relation:
- Conference: 40. national symposium of the American Vacuum Society (AVS),Orlando, FL (United States),15-19 Nov 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERLATTICES
MOLECULAR BEAM EPITAXY
SURFACE PROPERTIES
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
ALUMINIUM ARSENIDES
ARSENIC COMPOUNDS
MICROSCOPY
TEMPERATURE DEPENDENCE
HETEROJUNCTIONS
EXPERIMENTAL DATA
DOPED MATERIALS
SPECTROSCOPY
X-RAY DIFFRACTION
360601
360606
PREPARATION AND MANUFACTURE
PHYSICAL PROPERTIES