A structural investigation of compositionally graded InAs/sub x/Sb/sub 1-x/ buffer layers

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:6662458

Biefeld, R M

The preparation of high quality InAs/sub x/Sb/sub 1-x//InSb strained-layer superlattices (SLS's) which absorb in the 8--12 ..mu..m range was achieved through the use of compositionally graded buffer layers grown by MOCVD. Comparisons of surface morphology and the residual strain determined by double crystal x-ray diffraction were made between four types of graded buffer layers. Both the buffer layer thickness and composition profile were found to affect the formation of microcracks and dislocations. The relaxation in these buffers is less than expected from equilibrium models, but it is more complete in the continuously graded than in the step-graded layers. Residual strain in the InAs/sub x/Sb/sub 1-x//InSb SLS's was minimized by preparing InAs/sub y/Sb/sub 1-y/ buffer layers in which the parallel lattice constant of the strained buffer layer was closely matched to the parallel lattice constant of the SLS. 21 refs., 3 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6662458
• Report Number(s): SAND-88-1242C; CONF-881061-8; ON: DE89002890
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ANTIMONY
ARSENIC
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
INDIUM
LAYERS
MATERIALS
METALS
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SUPERLATTICES
SYNTHESIS
X-RAY DIFFRACTION