Fermi level effects on dislocation formation in InAs sub 1-x Sb sub x grown by MOCVD
Dislocation formation in InAs{sub 1-x}Sb{sub x} buffer layers grown by metal-organic chemical vapor deposition is shown to be reproducibly enhanced by p-type doping at levels greater than or equal to the intrinsic carrier concentration at the growth temperature. To achieve a carrier concentration greater than 2 {times} 10{sup 18} cm{sup {minus}3}, the intrinsic carrier concentration of InSb at 475 C, p-type doping with diethylzinc was used. Carrier concentrations up to 6 {times} 10{sup 18} cm{sup {minus}3} were obtained. The zinc doped buffer layers have proven to be reproducibly crack free for InAs{sub 1-x}Sb{sub x} step graded buffer layers with a final composition of x = 0.12 and a strained layer superlattice with an average composition of x = 0.09. These buffer layers have been used to prepare SLS infrared photodiodes. The details of the buffer layer growth, an explanation for the observed Fermi level effect and the growth and characterization of an infrared photodiode are discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5619694
- Report Number(s):
- SAND-91-1561C; CONF-911202--64; ON: DE92008332
- Country of Publication:
- United States
- Language:
- English
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The preparation of InAsSb/InSb SLS (strained-layer superlattice) and InSb photodiodes by MOCVD
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DISLOCATIONS
DOPED MATERIALS
ELEMENTS
ENERGY LEVELS
FERMI LEVEL
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
LAYERS
LINE DEFECTS
MATERIALS
METALS
PHOTODIODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES
SURFACE COATING
ZINC