Theoretical analysis of a rotating-disk chemical vapor deposition reactor

Conference · Thu Jan 01 04:00:00 EST 1987

OSTI ID:6086724

Coltrin, M E; Breiland, W G; Evans, G H; Kee, R J

The rotating-disk CVD reactor can be used to deposit thin films in the fabrication of microelectronic components. Computational solutions of the Navier-Stokes equations are used to determine the optimal operating conditions of the rotating disk reactor. Fortunately in most CVD processes the active gases that lead to deposition are present in only trace amounts in a carrier gas. Since the active gases are present in such small amounts, their presence has a negligible effect on the flow and the heat transfer in the carrier. Thus, for the purposes of determining the effects of buoyancy and confinement, the simulations can model the carrier gas alone (or with simplified chemical reaction models) - a substantial reduction in the problem size.

• OSTI ID: 6086724
• Report Number(s): CONF-870323-
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
BOUNDARY LAYERS
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIFFERENTIAL EQUATIONS
ELECTRONIC EQUIPMENT
EQUATIONS
EQUIPMENT
FABRICATION
FILMS
FLUID FLOW
FLUIDS
GAS FLOW
HEAT TRANSFER FLUIDS
KINETICS
LAYERS
MATHEMATICAL MODELS
MICROELECTRONICS
NAVIER-STOKES EQUATIONS
OPERATION
PARTIAL DIFFERENTIAL EQUATIONS
REACTION KINETICS
SUBSTRATES
SURFACE COATING
THIN FILMS