Heat transfer and flow stability in a rotating disk/stagnation flow chemical vapor deposition reactor
- Novellus Systems, Inc., San Jose, CA (United States)
- Sandia National Labs., Livermore, CA (United States). Thermal and Plasma Processes Dept.
Uniform growth of materials on substrates is one of the primary reactor design objectives in microelectronics materials manufacturing. Here, the flow and heat transfer in a vertical high-speed rotating disk/stagnation flow chemical vapor deposition (CVD) reactor is studied with particular emphasis on the effects of the spacing {bar H} between the stationary gas inlet and the rotating disk. In both one- and two-dimensional (1-D and 2-D) analyses the Navier-Stokes and energy equations are solved for hydrogen to determine the effects of {bar H}, flow rate, disk spin rate, buoyancy, and finite geometry on the gas flow patterns and the heat transfer from the disk. The 1-D results show that the heat transfer from the rotating disk, Nu{sub 1D}, depends on the flow parameter, SP, and the disk Reynolds number, Re{sub {omega}}, to a much greater extent at smaller spacings than at larger spacings. For SP values of 0.92 and 4.5 and for both spacings studied, Nu{sub 1D} approaches the value for an infinite rotating disk in a semi-infinite medium for Re{sub {omega}} > 450 approximately, except for the case at SP = 4.5 and A = 0.54, where Nu{sub 1D} is significantly larger. The 2-D results show a larger effect of SP on the radial variation of Nu{sub 2D} for larger values of A (the uniformity of Nu{sub 2D} is improved significantly at the larger A when the inlet velocity matches the asymptotic value for an infinite rotating disk).
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- OSTI ID:
- 500897
- Journal Information:
- Numerical Heat Transfer. Part A, Applications, Journal Name: Numerical Heat Transfer. Part A, Applications Journal Issue: 8 Vol. 31; ISSN NHAAES; ISSN 1040-7782
- Country of Publication:
- United States
- Language:
- English
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