Solutions to current induced avalanche burnout
Conference
·
OSTI ID:6068670
Reviews of normal breakdown and current induced avalanche breakdown mechanisms in silicon power transistors are presented. We show the applicability of the current induced avalanche model to heavy ion induced burnouts. Finally, we present solutions to current induced avalanche in silicon power semiconductors. 7 refs., 5 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6068670
- Report Number(s):
- SAND-90-1712C; CONF-910627--1; ON: DE90013196
- Country of Publication:
- United States
- Language:
- English
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