Solutions to heavy ion induced avalanche burnout in power devices
Silicon power devices fall into two broad categories, bipolar and field effect. Transistors using both of these technologies are often used in satellite applications for power conversion. The present trend is toward integrating power transistors and control electronics on the same chip. In this case, it is the power portion of the chip that is most susceptible to burnout failures, because of it's high voltage operation. Hence, it is important to understand the operational limitations of power transistors when exposed to intense heavy ion and/or dose-rate environments. Reviews of normal breakdown and current induced avalanche breakdown mechanisms in silicon power transistors are presented. We show the applicability of the current induced avalanche model to heavy ion induced burnouts and present solutions to current induced avalanche in silicon power semiconductors. 9 refs., 5 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5150358
- Report Number(s):
- SAND-91-0219C; CONF-9109232--3; ON: DE92001625
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ALUMINIUM
BREAKDOWN
CHARGED PARTICLES
ELECTRIC DISCHARGES
ELECTRONIC CIRCUITS
ELEMENTS
FIELD EFFECT TRANSISTORS
HEAVY IONS
INTEGRATED CIRCUITS
IONS
IRRADIATION
JUNCTIONS
METALS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
MOSFET
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
TOWNSEND DISCHARGE
TRANSISTORS