Solutions to single event current induced avalanche burnout
Conference
·
· AIP Conference Proceedings (American Institute of Physics); (United States)
- Sandia National Laboratories, P.O. Box 5800 Albuquerque, NM 87185 (US)
Reviews of normal breakdown and current induced avalanche breakdown mechanisms in silicon power transitors are presented. We show the applicability of the current induced avalanche model to heavy ion induced burnouts. Finally, we present solutions to current induced avalanche in silicon power semiconductors.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5471787
- Report Number(s):
- CONF-910116--
- Journal Information:
- AIP Conference Proceedings (American Institute of Physics); (United States), Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Vol. 217:2; ISSN 0094-243X; ISSN APCPC
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BREAKDOWN
BURNOUT
DOPED MATERIALS
FIELD EFFECT TRANSISTORS
JUNCTIONS
MATERIALS
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SPACE VEHICLES
TRANSISTORS
VEHICLES
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BREAKDOWN
BURNOUT
DOPED MATERIALS
FIELD EFFECT TRANSISTORS
JUNCTIONS
MATERIALS
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SPACE VEHICLES
TRANSISTORS
VEHICLES