Computer simulation of ionizing radiation burnout in power MOSFETs

Conference · Thu Dec 01 00:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6177014

Keshavarz, A A; Hawkins, C F; Fischer, T A; Dawes, Jr, W R

The first computer simulation of the ..gamma..-induced burnout in power MOSFETs is reported here. The modeling results support the current-induced avalanche burnout mechanism at the interface of the epitaxial layer and the substrate coupled with parasitic bipolar transistor action leading to secondary breakdown and thermal runaway. The simulations allow an evaluation of the effects of semiconductor parameters, device geometry, doping profiles and bias voltage on the burnout dose rate threshold. The model provides a method for optimizing the radiation hardness of power MOSFETs.

• Research Organization: Dept. of Electrical and Computer Engineering, Univ. of New Mexico, Albuquerque, NM (US); Sandia National Lab., Albuquerque, NM (US)
• OSTI ID: 6177014
• Report Number(s): CONF-880730-; TRN: 89-011586
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 35:6; Conference: 25. annual conference on nuclear and space radiation effects, Portland, OR, USA, 12 Jul 1988
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
MOSFET
RADIATION HARDENING
COMPUTERIZED SIMULATION
EPITAXY
GEOMETRY
IONIZING RADIATIONS
OPTIMIZATION
RADIATION DOSES
DOSES
FIELD EFFECT TRANSISTORS
HARDENING
MATHEMATICS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
654001 - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments