Computer simulation of ionizing radiation burnout in power MOSFETs
Conference
·
OSTI ID:7166523
The transient response of a power MOSFET device to ionizing radiation was examined using the BAMBI device simulator. The radiation rate threshold for burnout was determined for several different cases. The burnout mechanism was attributed to current-induced avalanche. The effects of the applied drain-source voltage and the base width of the parasitic bipolar device on the threshold level were modeled. It was found that the radiation rate threshold is lower at higher drain-source voltages or narrower bases. 8 refs., 17 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7166523
- Report Number(s):
- SAND-88-1870C; CONF-880730-6; ON: DE88012392
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
99 GENERAL AND MISCELLANEOUS
990220 -- Computers
Computerized Models
& Computer Programs-- (1987-1989)
B CODES
BREAKDOWN
COMPUTER CODES
COMPUTERIZED SIMULATION
DATA
FIELD EFFECT TRANSISTORS
INFORMATION
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
NUMERICAL DATA
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
99 GENERAL AND MISCELLANEOUS
990220 -- Computers
Computerized Models
& Computer Programs-- (1987-1989)
B CODES
BREAKDOWN
COMPUTER CODES
COMPUTERIZED SIMULATION
DATA
FIELD EFFECT TRANSISTORS
INFORMATION
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
NUMERICAL DATA
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS