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Electrical and structural characteristics of laser-induced epitaxial layers in silicon

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.91167· OSTI ID:6064548
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We have used pulsed-laser radiation to grow homoepitaxial p-n junctions in silicon. Doped amorphous silicon was deposited on (100) and (111) silicon substrates and annealed with a Q-switched ruby laser. By this technique, perfect epitaxial layers with good electrical characteristics and controlled dopant profiles can be achieved. The technique can potentially be competitive with or replace ion implantation for many semiconductor-device applications.

Research Organization:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
OSTI ID:
6064548
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:6; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
ANNEALING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
HEAT TREATMENTS
JUNCTIONS
LASER RADIATION
P-N JUNCTIONS
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON