Laser processing for high-efficiency silicon solar cells
The experimental and theoretical aspects of the physics of pulsed laser annealing are reviewed with attention to the application of laser processing to solar cell fabrication. The approaches to junction formation discussed include ion implantation followed by laser annealing, laser-induced diffusion of surface-deposited dopants, laser recrystallization of doped amorphous films, and laser annealing after dopant implantation by glow and corona discharge. Cells made from 15 ohm-cm base material with junctions formed by ion-implantation and laser annealing or by laser-induced diffusion of surface-deposited dopants give 15% AM1 efficiencies without back surface fields or front surface passivation. Radiation from Q-switched lasers can also be used to clean up the emitter region in cells made by conventional thermal diffusion and to control grain boundary diffusion in polycrystalline materials.
- Research Organization:
- Oak Ridge National Lab., Oak Ridge, TN
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6506747
- Report Number(s):
- CONF-800106-
- Journal Information:
- Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
- Country of Publication:
- United States
- Language:
- English
Similar Records
Excimer laser annealing to fabricate low cost solar cells. Final technical report
Application of laser annealing and laser-induced diffusion to photovoltaic conversion
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
CRYSTAL DOPING
CRYSTAL STRUCTURE
DEPOSITION
DIFFUSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTROMAGNETIC RADIATION
EQUIPMENT
FABRICATION
GRAIN BOUNDARIES
HEAT TREATMENTS
HEATING
ION IMPLANTATION
JUNCTIONS
LASER RADIATION
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
Q-SWITCHING
RADIATIONS
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
THERMAL DIFFUSION