Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Excimer laser annealing to fabricate low cost solar cells. Final technical report

Technical Report ·
OSTI ID:5365066
The objective of this program is to show the feasibility of using excimer lasers for cost effective annealing of ion-implanted emitters in the fabrication of silicon solar cells. The maximum AM1 efficiency achieved by the pulse excimer laser anneal (PELA) process for n/sup +/pp/sup +/ cells was 15.6% for a 2 cm x 2 cm cell with photolithographically-patterned contacts. The maximum AM1 efficiency achieved by this PELA process for 100 mm diameter cells with screen printed contacts was 12%. These results are comparable with both diffused junction cells, and cells fabricated by ion-implantation and conventional furnace annealing. IPEG analyses were used to estimate the cost of laser annealing, furnace annealing with passivating oxide growth, and diffused junction formation on a 3 MW/yr production line. The cost of laser annealing was estimated to be 4.9 cents/watt compared to 7.1 cents per watt for the furnace anneal with oxide growth. However, the latter process was more cost effective. This study shows that the projected efficiency for ion-implanted laser annealed silicon solar cells would be 14%, compared to 16.4% with an oxide passivated furnace annealed cell, or an estimated 13% plus for a diffused junction cell. The module costs for these three processes were estimated as $6.56/watt, $5.81/watt, and $6.20/watt respectively. For crystalline silicon solar cells, ion-implantation with furnace anneal and surface oxide passivation would be the preferred process at this production level.
Research Organization:
Spire Corp., Bedford, MA (USA)
DOE Contract Number:
NAS-7-100-956797
OSTI ID:
5365066
Report Number(s):
DOE/JPL/956797-04; ON: DE86015247
Country of Publication:
United States
Language:
English