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Epitaxial growth and critical current density of thin films of YBa/sub 2/Cu/sub 3/O/sub 7/minus//ital x// on LaAlO/sub 3/ substrates

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101549· OSTI ID:6052012

Thin films of the high-temperature superconductor YBa/sub 2/ Cu/sub 3/ O/sub 7/minus/x/ have been produced on (100) LaAlO/sub 3/ substrates by coevaporation and furnace annealing. A 14-..mu..m-wide and 400-..mu..m-long constriction patterned on a 0.8-..mu..m-thick film had a zero resistance transition temperature of 90 K, a transition width of 1.5 K, and a critical current density of 8/times/10/sup 4/ A cm/sup /minus/2/ at 77 K. Although x-ray diffraction shows a definite /ital c/-axis alignment normal to the substrate plane, further analysis reveals that /ital c/-axis alignment in the substrate plane is also present. The detailed microstructural picture is revealed by transmission electron microscopy: a continuous layer, about 0.2 ..mu..m thick adjacent to the substrate, with /ital c/ axis normal to the substrate plane, and the remaining top portion of the film, with the /ital c/ axis in the film plane. In spite of the bilayer structure, the film remains epitaxial (the axes of the superconductor are parallel to the <100> directions of the substrate).

Research Organization:
GE Research and Development Center, Schenectady, New York 12301(US)
OSTI ID:
6052012
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:26; ISSN APPLA
Country of Publication:
United States
Language:
English

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