Electronic properties of sol-gel-derived oxides on silicon

Journal Article · Mon Oct 12 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98725· OSTI ID:6038907

Weimer, R A; Lenahan, P M; Marchione, T A; Brinker, C J

Sol-gel-derived SiO/sub 2/, borosilicate, and aluminosilicate thin films deposited on silicon and heated for 5 min at temperatures of 1000 /sup 0/C or lower exhibit dielectric strength as great as 5 MV/cm and interface state densities as low as --1 x 10/sup 11//cm/sup 2/ eV. These values represent significant improvements over previous sol-gel-derived oxides on semiconductors and indicate that sol-gel processing can provide device quality oxides in situations where native oxides are unavailable or exhibit poor dielectric behavior, e.g., amorphous, hydrogenated silicon or III-V compound semiconductors.

• Research Organization: Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802
• OSTI ID: 6038907
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM COMPOUNDS
BORON COMPOUNDS
CHALCOGENIDES
DIELECTRIC PROPERTIES
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
ELEMENTS
EQUIPMENT
FILMS
INTERFACES
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMIMETALS
SILICA
SILICATES
SILICON
SILICON COMPOUNDS
SILICON OXIDES
THIN FILMS