MOS solar cells with oxides deposited by sol-gel spin-coating techniques
- National Kaohsiung Normal University, Department of Electronic Engineering, Taiwan (China)
- National Taiwan Ocean University, Department of Electrical Engineering, Taiwan (China)
The metal-oxide-semiconductor (MOS) solar cells with sol-gel derived silicon dioxides (SiO{sub 2}) deposited by spin coating are proposed in this study. The sol-gel derived SiO{sub 2} layer is prepared at low temperature of 450 Degree-Sign C. Such processes are simple and low-cost. These techniques are, therefore, useful for largescale and large-amount manufacturing in MOS solar cells. It is observed that the short-circuit current (I{sub sc}) of 2.48 mA, the open-circuit voltage (V{sub os}) of 0.44 V, the fill factor (FF) of 0.46 and the conversion efficiency ({eta}%) of 2.01% were obtained by means of the current-voltage (I-V) measurements under AM 1.5 (100 mW/cm{sup 2}) irradiance at 25 Degree-Sign C in the MOS solar cell with sol-gel derived SiO{sub 2}.
- OSTI ID:
- 22126505
- Journal Information:
- Semiconductors, Vol. 47, Issue 6; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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