Electrical properties of metal-oxide-silicon structures with sol-gel oxides

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:7074473

Warren, W L; Lenahan, P M; Brinker, C J

The authors have investigated the electronic properties of sol-gel derived films on silicon substrates. Our investigation involves SiO/sub 2/, aluminosilicate and borosilicate oxides on silicon. Some sol-gel oxides are excellent insulators; some sol-gel films on silicon also exhibit quite low oxide/silicon interface trap densities. We have also subjected sol-gel films on silicon to 4 Mrad(SiO/sub 2/) of radiation and have found that these structures appear to be radiation hard (very little radiation induced oxide space charge or interface trap generation). Our results strongly suggest that sol-gel processing could provide insulating films for a variety of microelectronic device applications.

• Research Organization: Pennsylvania State Univ., University Park (USA). Dept. of Engineering Science and Mechanics; Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7074473
• Report Number(s): SAND-88-1579C; CONF-880408-29; ON: DE88011791
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ALUMINIUM SILICATES
BORON COMPOUNDS
BORON OXIDES
BORON SILICATES
CHALCOGENIDES
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
MICROELECTRONICS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICATES
SILICON
SILICON COMPOUNDS
SOL-GEL PROCESS
SUBSTRATES