Sol-gel processing of metal-oxide-semiconductor structures

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:7255160

Warren, W L; Lenahan, P M; Brinker, C J

We have investigated the electronic properties of sol-gel derived films on silicon substrates. Our investigation involves SiO/sub 2/, aluminosilicate and borosilicate oxides on silicon. Some sol-gel oxides are excellent insulators; some sol-gel films on silicon also exhibit quite low oxidesilicon interface state densities. We have also subjected sol-gel films on silicon to 4 MRAD of radiation and have found that these structures appear to be radiation hard (very little oxide space charge or interface state generation). Our results strongly suggest that sol-gel processing could provide insulating films for a variety of microelectronic device applications. 21 refs., 6 figs., 2 tabs.

• Research Organization: Pennsylvania State Univ., University Park (USA). Dept. of Engineering Science and Mechanics; Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7255160
• Report Number(s): SAND-88-1139C; CONF-8804114-1; CONF-8804114-; ON: DE88009853
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
DEPOSITION
ELEMENTS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PRODUCTION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOL-GEL PROCESS
TRANSISTORS