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Title: Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs

Abstract

In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 10{sup 13} /cm{sup 2}, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350 {degree}C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2{sup +}) to the neutral EL2{sup 0}.

Authors:
; ;  [1]; ; ;  [2];  [3]
  1. (College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (JP))
  2. (Electrotechnical Laboratory, Tsukuba, Ibaraki 305, (Japan))
  3. (The Institute of Physical and Chemical Research, Wako, Saitama 315-01, (Japan))
Publication Date:
OSTI Identifier:
6012121
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; (USA); Journal Volume: 68:12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; ABSORPTIVITY; INFRARED SPECTRA; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PROTONS; TEMPERATURE DEPENDENCE; ARSENIC COMPOUNDS; ARSENIDES; BARYONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; NUCLEONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SPECTRA; 360605* - Materials- Radiation Effects

Citation Formats

Kuriyama, K., Takahashi, H., Kawahara, H., Hayashi, N., Watanabe, H., Sakamoto, I., and Kohno, I. Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs. United States: N. p., 1990. Web. doi:10.1063/1.346855.
Kuriyama, K., Takahashi, H., Kawahara, H., Hayashi, N., Watanabe, H., Sakamoto, I., & Kohno, I. Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs. United States. doi:10.1063/1.346855.
Kuriyama, K., Takahashi, H., Kawahara, H., Hayashi, N., Watanabe, H., Sakamoto, I., and Kohno, I. 1990. "Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs". United States. doi:10.1063/1.346855.
@article{osti_6012121,
title = {Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs},
author = {Kuriyama, K. and Takahashi, H. and Kawahara, H. and Hayashi, N. and Watanabe, H. and Sakamoto, I. and Kohno, I.},
abstractNote = {In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 10{sup 13} /cm{sup 2}, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350 {degree}C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2{sup +}) to the neutral EL2{sup 0}.},
doi = {10.1063/1.346855},
journal = {Journal of Applied Physics; (USA)},
number = ,
volume = 68:12,
place = {United States},
year = 1990,
month =
}
  • The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simplemore » model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.« less
  • Semi-insulating SI GaAs samples from a zone refined crystal were irradiated with high energy protons (24 GeV/c, fluences up to 1.64{times}10{sup 14}p/cm{sup 2}). Optical spectra in transmittance and reflectance were accurately measured in the energy range of 0.6{endash}1.4 eV to determine, through the absorption coefficient, the concentrations of both neutral and ionized EL2 defects as a function of the proton fluence. Both these concentrations have been shown to increase linearly with the proton fluence; this behavior well explains the remarkable decrease of the charge collection efficiency observed in proton irradiated GaAs detectors at doses associated with high luminosity beams atmore » a new particle collider accelerator (e.g., the LHC at the CERN laboratory). {copyright} {ital 1997 American Institute of Physics.}« less
  • Defects induced by electron irradiation in semi-insulating and {ital n}-type GaAs crystals have been characterized by positron-lifetime measurements. We conclude that electron irradiation with energies of 1.5--3 MeV produces negative monovacancies and negative ions at low and room temperature. The results also show that the native monovacancy defects in lightly {ital n}-type GaAs change their properties under irradiation. We relate this change to the existence of an ionization level {minus}{r arrow}0 or 0{r arrow}+ of the native monovacancy defects in the upper half of the band gap. We propose that irradiation produces negative Ga{sub As} antisites and negative {ital V}{submore » Ga} vacancies. In {ital n}-type GaAs the behavior of the native defects under irradiation is in agreement with their earlier assignment to {ital V}{sub As}.« less
  • Electron irradiation induced defects in semi-insulating GaAs grown by the liquid-encapsulated Czochralski technique were studied using infrared absorption spectroscopy. A broad peak (P1) and a shoulder (P2) were observed in the infrared absorption spectra of the irradiated materials at 0.98 and 0.78 eV, respectively. The electron-phonon coupling strength as well as the Franck--Condon shift of P1 was estimated from the temperature dependence of the linewidth. The annealing kinetics between 375 and 450 /sup 0/C show that the P1 defect vanishes by a long-range migration process with an enthalpy of 0.78 +- 0.02 eV. A speculation for the atomic structure ofmore » P1 is presented.« less
  • Primary defects induced by 1 MeV electron irradiation have been quantitatively studied in semi-insulating (SI) GaAs by using normalized thermally stimulated current spectroscopy, a new technique. Defects identical to (or similar to) those known in the thermally stimulated current literature as T{sub 6}{sup {asterisk}}(0.13 eV), T{sub 5}(0.34 eV), and T{sub 4}(0.31 eV) are produced at rates 0.70, 0.08, and 0.23 cm{sup {minus}1}, respectively; T{sub 5} is also a strong trap in unirradiated SI GaAs. The defects T{sub 6}{sup {asterisk}} and T{sub 4} correspond closely to the irradiation-induced traps E2(0.14 eV) and E3(0.30 eV), studied extensively by deep-level transient spectroscopy andmore » Hall-effect measurements and assigned to the As vacancy. We thus infer that traps T{sub 6}{sup {asterisk}} and T{sub 4} (and probably also T{sub 5}) in SI GaAs have As-vacancy character. {copyright} {ital 1997} {ital The American Physical Society}« less