Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs

Journal Article · Fri Dec 14 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.346855· OSTI ID:6012121

Kuriyama, K; Takahashi, H; Kawahara, H ^[1]; Hayashi, N; Watanabe, H; Sakamoto, I ^[2]; Kohno, I ^[3]

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1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (JP)
2. Electrotechnical Laboratory, Tsukuba, Ibaraki 305, (Japan)
3. The Institute of Physical and Chemical Research, Wako, Saitama 315-01, (Japan)

In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 10{sup 13} /cm{sup 2}, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350 {degree}C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2{sup +}) to the neutral EL2{sup 0}.

• OSTI ID: 6012121
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 68:12; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ABSORPTIVITY
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
INFRARED SPECTRA
NUCLEONS
OPTICAL PROPERTIES
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
SPECTRA
TEMPERATURE DEPENDENCE