Annealing behavior of photoconductance relating to electron-irradiation-induced defects in semi-insulating GaAs
- College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (JP)
- Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-04, (Japan)
The annealing behavior of photoconductance in electron-irradiated semi-insulating GaAs grown by the magnetic-applied liquid-encapsulated Czochralski technique is studied in terms of the electron-irradiation-induced defects. A decrease in photoconductance for samples annealed at 350 {degree}C is attributed to the interband transition of the photoexcited electrons within the electron-irradiation-induced defect observed at around 0.98 eV using infrared absorption spectroscopy. The recovery of the photoconductance for samples annealed above 400 {degree}C is enhanced by the annihilation of the 0.98-eV defect, accompanied by the photoquenching of the photoconductance below 140 K. An unquenchable component in photoconductance appeared by an annealing above 600 {degree}C is proposed to be a ital V{sub As}-ital C{sub As} complex by photoluminescence measurements.
- OSTI ID:
- 5747775
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Journal Issue: 2 Vol. 70:2; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ABSORPTION SPECTROSCOPY
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CZOCHRALSKI METHOD
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFRARED SPECTRA
LUMINESCENCE
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SPECTRA
SPECTROSCOPY