Infrared absorption of electron irradiation induced deep defects in semi-insulating GaAs

Journal Article · Sun Dec 11 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100229· OSTI ID:6945775

Manasreh, M O; Fischer, D W

Electron irradiation induced defects in semi-insulating GaAs grown by the liquid-encapsulated Czochralski technique were studied using infrared absorption spectroscopy. A broad peak (P1) and a shoulder (P2) were observed in the infrared absorption spectra of the irradiated materials at 0.98 and 0.78 eV, respectively. The electron-phonon coupling strength as well as the Franck--Condon shift of P1 was estimated from the temperature dependence of the linewidth. The annealing kinetics between 375 and 450 /sup 0/C show that the P1 defect vanishes by a long-range migration process with an enthalpy of 0.78 +- 0.02 eV. A speculation for the atomic structure of P1 is presented.

• Research Organization: Air Force Wright Aeronautical Laboratories, Materials Laboratory (AFWAL/MLPO), Wright--Patterson Air Force Base, Ohio 45433-6533
• OSTI ID: 6945775
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:24; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ABSORPTION SPECTRA
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CZOCHRALSKI METHOD
ELECTRON COLLISIONS
ELECTRON-PHONON COUPLING
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
INFRARED SPECTRA
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SPECTRA