Radiation-hard design principles utilized in CMOS 8085 microprocessor family

Conference · Sat Jan 01 04:00:00 EST 1983

OSTI ID:5968322

Kim, W S; Mnich, T M; Corbett, W T; Treece, R K; Giddings, A E; Jorgensen, J L

A microprocessor family has been designed in radiation-hardened bulk, silicon-gate CMOS and the three main family members are logic emulations of Intel NMOS devices: SA3000, a general-purpose 8-bit central processing unit (CPU) (Intel 8085A); SA3001, a 256 x 8-bit static RAM with two 8-bit I/O ports, one 6-bit I/O port and a timer (Intel 8155/56); SA3002, a 2K x 8-bit ROM with two 8-bit I/O ports (Intel 8355). This paper describes the design principles and methodology used to realize fully static, fully complementary CMOS devices capable of withstanding more than one megarad total dose. These designs are latchup-free and are built on epitaxial substrates using a 3-micron gate length technology. In order to achieve this level of radiation tolerance, the radiation characteristics of the process must be measured and the radiation effects accommodated in all phases of the design.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5968322
• Report Number(s): SAND-83-1601C; CONF-830714-10; ON: DE83015112
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420200* -- Engineering-- Facilities
Equipment
& Techniques
COMPUTERS
DESIGN
ELECTRONIC CIRCUITS
HARDENING
LOGIC CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS