Radiation testing of the CMOS 8085 microprocessor family
Conference
·
OSTI ID:5766018
Radiation testing of the SA3000 family, CMOS versions of the Intel 8085 microprocessor family, has demonstrated full functionality after 3 x 10/sup 6/ rad (Si) total dose. Static supply currents measured after reset increased from approximately 50 etaA to 500 ..mu..A at V/sub DD/ = 10V while maximum operating frequency decreased from greater than 10 MHz to 4 MHz at V/sub DD/ = 9V post 3 x 10/sup 6/ rad (Si). Output drive currents decreased 25% post 1 x 10/sup 6/ rad (Si) and 40% post 3 x 10/sup 6/ rad (Si). The nominal threshold voltage shift of discrete transistors measured under worst-case bias (n-channels, ON; p-channels, OFF) shifted -0.5 volts and -2.40 volts post 1 x 10/sup 6/ rad (Si) for n-channel and p-channel MOSFETs, respectively. Transient radiation upset levels of about 1 x 10/sup 9/ rad (Si)/sec have been measured for parts from this family. Latch-up immunity has been demonstrated up to 1 x 10/sup 12/ rad (Si)/sec and electrical bench tests are discussed which prove this technology is immune to latch-up. The technology used for the SA3000 family is a 3..mu..m silicon gate process fabricated in n and n+ epitaxial silicon. Functional test programs for each chip of the family are discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5766018
- Report Number(s):
- SAND-83-0615C; CONF-830714-13; ON: DE83014604
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characteristics of CMOS/bulk and SOS memories in a transient environment
Thirty megarad CMOS gate array for spacecraft applications
Radiation hardened p-surface channel CCD's
Conference
·
Wed Nov 30 23:00:00 EST 1977
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:6545765
Thirty megarad CMOS gate array for spacecraft applications
Journal Article
·
Fri Nov 30 23:00:00 EST 1984
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:5865631
Radiation hardened p-surface channel CCD's
Conference
·
Tue Nov 30 23:00:00 EST 1976
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:7256743
Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
COMPUTERS
CURRENTS
DATA
DOSE RATES
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FREQUENCY RANGE
HEAT TREATMENTS
INFORMATION
MEMORY DEVICES
MHZ RANGE
MHZ RANGE 01-100
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
NUMERICAL DATA
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TESTING
TRANSISTORS
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
COMPUTERS
CURRENTS
DATA
DOSE RATES
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FREQUENCY RANGE
HEAT TREATMENTS
INFORMATION
MEMORY DEVICES
MHZ RANGE
MHZ RANGE 01-100
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
NUMERICAL DATA
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TESTING
TRANSISTORS