Characteristics of CMOS/bulk and SOS memories in a transient environment

Conference · Wed Nov 30 23:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6545765

Brucker, G J

SOS and bulk silicon memories were exposed to 18 and 100 nanosecond pulses of 10 MeV electrons from a linac generator. Dose rates for upset, data scrambling, and latch-up were determined. The SOS devices did not scramble data when exposed to dose rates greater than 2 x 10/sup 10/ rads (Si)/sec for the 18 nanosecond pulse. The upset dose rate in SOS devices during the read operation is dependent on the time of occurrence of the radiation pulse relative to the switching waveform during the operation. It varied from a low of 6 x 10/sup 9/ rads (Si)/sec to a high of >2.7 x 10/sup 10/ rads (Si)/sec depending on conditions of operation. Bulk silicon memories of equal size and similar design to the SOS devices latch-up at dose rates of 10/sup 8/ rads (Si)/sec, a smaller bulk memory (the CD4061) was shown to be capable of exposure to dose rates of 10/sup 11/ rads (Si)/sec with a limited number of samples latching-up when operated at 5 volts. All of these smaller memory samples latched-up when the voltage was increased to 10 volts and the dose rate was in the range of 2 to 6 x 10/sup 9/ rads (Si)/sec.

• Research Organization: RCA Astro Electronics, Princeton, NJ
• OSTI ID: 6545765
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
• Country of Publication: United States
• Language: English

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ALUMINIUM COMPOUNDS
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OXYGEN COMPOUNDS
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