Temperature dependence of spontaneous emission from AlGaAs-GaAs laser diodes

Journal Article · Tue Apr 01 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336325· OSTI ID:5953151

Zabrowski, D W; Rice, R R; Specht, A P

The relationship between spontaneous and stimulated emission from a variety of AlGaAs-GaAs double-heterostructure laser diodes has been studied as a function of temperature over a range of 10--70 /sup 0/C. The spontaneous emission varied exponentially with temperature, and we introduce T/sup prime//sub 0/(J) as the characteristic temperature of spontaneous emission. As the temperature was changed, the laser threshold and slope efficiency for a device strongly covaried with spontaneous emission. A moderately high correlation (r>0.75) was obtained between the lasing and spontaneous emission slope efficiencies of 20 randomly selected lasers from different suppliers.

• Research Organization: McDonnell Douglas Astronautics Company, St. Louis, Missouri 63166
• OSTI ID: 5953151
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY