Spectrum studies on a GaAs-AlGaAs multi-quantum-well laser diode grown by molecular beam epitaxy

Journal Article · Sun May 01 04:00:00 EDT 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332292· OSTI ID:6156360

Iwamura, H; Saku, T; Kobayashi, H; Horikoshi, Y

Spontaneous and stimulated emission spectrum and the different characteristics between TE and TM polarizations were investigated on a GaAs--AlGaAs multi-quantum-well (MQW) laser diode grown by molecular beam epitaxy. The MQW laser lases at 38 meV below the photoluminescence peak energy corresponding to the lowest confined electron to heavy hole recombination energy E/sub 1h/, calculated using the Kronig--Penney model. However, this energy separation cannot be interpreted in terms of the LO-phonon assisted recombination which is usually accepted. The LO-phonon assisted recombination model can be ruled out by comparing the spontaneous emission and the stimulated emission for various injection current levels. The emission energy of the TE polarization was lower than that of the TM polarization. The intensity of the TE is much larger than the TM polarization. These differences can be interpreted in terms of the selection rule for the dipole recombination between confined electron to heavy hole and electron to light hole bands.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 6156360
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL GROWTH
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LUMINESCENCE
MATHEMATICAL MODELS
MOLECULAR BEAMS
OSCILLATION MODES
PHONONS
PHOTOLUMINESCENCE
PNICTIDES
POLARIZATION
QUASI PARTICLES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
STIMULATED EMISSION