Phonon-assisted stimulated emission in thin (<55 A) AlGaAs-GaAs-AlGaAs single quantum wells

Journal Article · Mon Dec 05 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100249· OSTI ID:6944117

Lo, Y C; Kolbas, R M

Since the initial report of phonon-assisted stimulated emission in AlGaAs-GaAs quantum wells, several laboratories have performed similar experiments which have produced a wide range of experimental data and interpretations. We present photopumped laser data (77 K) from three different AlGaAs-GaAs-AlGaAs single quantum well heterostructures grown by molecular beam epitaxy. Closely spaced end-to-end laser modes are observed one phonon energy (approx. =36 meV) below the n = 1' electron to light hole confined-particle state which we attribute to phonon-assisted stimulated emission. Also, the data are inconsistent with impurity related luminescence or optical absorption losses which have been suggested as alternative explanations. These results are important because these are the thinnest quantum wells to exhibit phonon-assisted stimulated emission and the first independent observation and confirmation of this important phenomenon.

• Research Organization: Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
• OSTI ID: 6944117
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:23; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
LASER RADIATION
LASERS
LOW TEMPERATURE
LUMINESCENCE
OPACITY
OPTICAL PROPERTIES
OPTICAL PUMPING
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THIN FILMS