Effects of pulsed irradiation with subthreshold-energy electrons on electrical properties of indium antimonide films
Journal Article
·
· Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:5952578
Epitaxial films of n-type indium antimonide were bombarded at 78 and 300 /sup 0/K with electrons of energies 15--30 keV. The results suggested that simple Frenkel pairs formed at 78 /sup 0/K but at 300 /sup 0/K these combined into larger complexes. Irradiation at 300 /sup 0/K or irradiation at 78 /sup 0/K followed by annealing at 300 /sup 0/K increased the majority-carrier density and mobility probably because of deactivation of some unidentified acceptor centers. (AIP)
- Research Organization:
- M. V. Lomonosov State University, Moscow
- OSTI ID:
- 5952578
- Journal Information:
- Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 13:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
INDIUM COMPOUNDS
PHYSICAL RADIATION EFFECTS
ANTIMONY COMPOUNDS
CARRIER DENSITY
CARRIER MOBILITY
ELECTRON COLLISIONS
INTERMETALLIC COMPOUNDS
KEV RANGE 10-100
LOW TEMPERATURE
MEDIUM TEMPERATURE
ALLOYS
COLLISIONS
ENERGY RANGE
KEV RANGE
MOBILITY
RADIATION EFFECTS
360605* - Materials- Radiation Effects
INDIUM COMPOUNDS
PHYSICAL RADIATION EFFECTS
ANTIMONY COMPOUNDS
CARRIER DENSITY
CARRIER MOBILITY
ELECTRON COLLISIONS
INTERMETALLIC COMPOUNDS
KEV RANGE 10-100
LOW TEMPERATURE
MEDIUM TEMPERATURE
ALLOYS
COLLISIONS
ENERGY RANGE
KEV RANGE
MOBILITY
RADIATION EFFECTS
360605* - Materials- Radiation Effects