Influence of electron irradiation on the electrical properties of and recombination in indium antimonide

Journal Article · Fri Sep 01 00:00:00 EDT 1978 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6488606

Zaitov, F A; Polyakov, A Y

An investigation was made of the influence of room-temperature irradiation with electrons of energies 1, 4.5, 15, and 25 MeV on the electrical properties and recombination of excess carriers in n- and p-type indium antimonide. Such irradiation resulted in inversion of the type of conduction in p-type InSb. The same effect was produced by irradiation with 25 MeV electrons at 77/sup 0/ K followed by annealing at room temperature. An attempt was made to establish a correlation between the rate of introduction of defects by the bombarding electrons of various energies and the number of atoms displaced elastically by these electrons. Formation of disordered regions in InSb was possible at electron energies exceeding 5 MeV. Irradiation at room temperature or at 77/sup 0/ K did not alter the recombination mechanism or the concentration of the recombination levels.

• OSTI ID: 6488606
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 12:9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM COMPOUNDS
PHYSICAL RADIATION EFFECTS
ANTIMONY COMPOUNDS
CARRIERS
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
LOW TEMPERATURE
MEV RANGE 01-10
MEV RANGE 10-100
RECOMBINATION
COLLISIONS
ENERGY RANGE
MEV RANGE
PHYSICAL PROPERTIES
RADIATION EFFECTS
360605* - Materials- Radiation Effects