Nature of deep acceptors in indium antimonide

Journal Article · Mon Jun 01 04:00:00 EDT 1981 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6125205

Zaitov, F; Gorshkova, O; Polyakov, A; Kevorkov, M; Popkov, A

Samples of p- and n-type indium antimonide doped with various impurities were irradiated at room temperature with 25 MeV electrons. The temperatures dependences of the Hall coefficient and electrical resistivity were recorded in the range 4.2--300 /sup 0/K before and after irradiation. The results indicated that deep acceptors with a level at E/sub c/-0.05 eV were complexes consisting of a primary radiation defect (most probably an interstitial indium atom) and an oxygen atom. (AIP)

• OSTI ID: 6125205
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 15:6; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALLOYS
ANTIMONY ALLOYS
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
HALL EFFECT
IMPURITIES
INDIUM ALLOYS
INTERSTITIALS
MEDIUM TEMPERATURE
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS