Effects of pulsed irradiation with subthreshold-energy electrons on electrical properties of indium antimonide films

Journal Article · Sun Apr 01 04:00:00 EST 1979 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:5952578

Vavilov, V S; Ok, A M; Chukichev, M V

Epitaxial films of n-type indium antimonide were bombarded at 78 and 300 /sup 0/K with electrons of energies 15--30 keV. The results suggested that simple Frenkel pairs formed at 78 /sup 0/K but at 300 /sup 0/K these combined into larger complexes. Irradiation at 300 /sup 0/K or irradiation at 78 /sup 0/K followed by annealing at 300 /sup 0/K increased the majority-carrier density and mobility probably because of deactivation of some unidentified acceptor centers. (AIP)

• Research Organization: M. V. Lomonosov State University, Moscow
• OSTI ID: 5952578
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 13:4; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALLOYS
ANTIMONY COMPOUNDS
CARRIER DENSITY
CARRIER MOBILITY
COLLISIONS
ELECTRON COLLISIONS
ENERGY RANGE
INDIUM COMPOUNDS
INTERMETALLIC COMPOUNDS
KEV RANGE
KEV RANGE 10-100
LOW TEMPERATURE
MEDIUM TEMPERATURE
MOBILITY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS