The effect of an excess of components on the electrical properties of indium-antimonide films

Journal Article · Sun Feb 15 04:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615020098· OSTI ID:22470073

Gulyaev, A. M.

The causes of anomalous behavior of the Hall mobility of charge carriers as a result of a decrease in the measurement temperature from 300 K in indium-antimonide films obtained by the method of three temperatures are studied. It is shown experimentally that there exist drops in the “admissible” temperatures of evaporators of components and the substrate within which continuous conducting films are obtained. The optimal conditions for sample preparation for which the values of the mobility remain practically constant in the temperature range of 150–350 K are determined. On the basis of the comparison with optical-transmission spectra, it is concluded that there is a high concentration of defects in the films; these defects are related to deviation of the composition from stoichiometry and act as donor and acceptor centers. The presence of such defects makes it possible to explain the decrease in mobility in the films as the temperature is lowered.

• OSTI ID: 22470073
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
ANTIMONIDES
CARRIER MOBILITY
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
ELECTRICAL PROPERTIES
FILMS
HALL EFFECT
INDIUM
SAMPLE PREPARATION
STOICHIOMETRY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K