PROPERTIES OF p-TYPE INDIUM ANTIMONIDE: I. ELECTRICAL PROPERTIES
Journal Article
·
· Proc. Phys. Soc. (London)
The dependence of electron and hole mobilities on carrier concentration has been determined for p-type indium antimonide with impurity concentrations ranging from 10/sup 14/ to 2 x 10/sup 17/ cm/sup -3/. The method used was the analysis of the variation of Hall coefficient and resistivity with a magnetic field. Good agreement was obtained with a simple theory, which assumes that the carrier relaxation time is independent of energy. The decrease of electron mobility with acceptor concentration can be explained by assuming that in pure indium antimonide the important scattering mechisms are polar scattering and electron-hole scattering. (auth)
- Research Organization:
- Services Electronics Research Lab., Baldock, Herts., Eng.
- NSA Number:
- NSA-12-009239
- OSTI ID:
- 4329431
- Journal Information:
- Proc. Phys. Soc. (London), Journal Name: Proc. Phys. Soc. (London) Vol. Vol: 71
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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