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N-p thermoconversion of indium antimonide

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:7009004
Without excluding the possibility of the simultaneous effectof several factors on the thermoconversion of indium antimonide, the authors investigated the role of copper in this process. For the experiments, they used single crystalline samples of indium antimonide of grade ISE-O with a charge-carrier density of n = (0.7-1.0).10/sup 14/ cm/sup -3/ at liquid nitrogen temperature and dislocation density of less than 10/sup 2/ cm/sup -2/, cut out of a single ingot grown by the Czochralski method. The authors conclude that copper participates in the formation of thermoacceptors in indium antimonide. The presence of copper on the surface of the sample during annealing does not significantly affect the charge-carrier density in the sample or the slopes of the Hall curves.
Research Organization:
M.V. Lomonosov Moscow Institute of Fine Chemical Technology
OSTI ID:
7009004
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:3; ISSN INOMA
Country of Publication:
United States
Language:
English