Kinetics of changes in the carrier density in indium antimonide due to irradiation with 50 MeV electrons

Journal Article · Fri Sep 01 04:00:00 EDT 1978 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6342987

Vitovskii, N A; Mashovets, T V; Oganesyan, O V; Pambukhchyan, N K

An investigation was made of the nature of defects and the kinetics of their formation in n-type samples with a 77/sup 0/K electron density of 6.3 x 10/sup 14/ cm/sup -3/ and in p-type samples with a hole density of 1.0 x 10/sup 14/ cm/sup -3/ and in p-type samples with a hole density of 1.0 x 10/sup 14/ cm/sup -3/, all samples being irradiated at room temperature with 50 MeV electrons. The electrical conductivity and the Hall effect before and after equal doses were determined in the temperature range 4.2-150/sup 0/K. It was concluded that the changes in the electrical properties of indium antimonide were due to disordered regions.(AIP)

• Research Organization: A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad
• OSTI ID: 6342987
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 12:9; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANTIMONY COMPOUNDS
CARRIER DENSITY
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
ENERGY RANGE
HALL EFFECT
INDIUM COMPOUNDS
MEV RANGE
MEV RANGE 10-100
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS