Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates

Journal Article · Sat Jul 15 04:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343520· OSTI ID:5944931

Yamaguchi, M; Amano, C; Itoh, Y

This paper describes some recent developments in GaAs thin-film solar cells fabricated on Si substrates by metalorganic chemical vapor deposition and numerically analyzes them.GaAs solar cells with efficiency of more than 18% are successfully fabricated on Si substrates by reducing the dislocation density. Photovoltaic properties of GaAs/Si cells are analyzed by considering the effect of nonuniform dislocation distribution on recombination properties of GaAs thin films on Si substrates. Numerical analysis shows that the effect of majority-carrier trapping must be considered. High efficiency GaAs solar cells with total-area efficiency of over 20% on Si substrates can be realized if dislocation density can be reduced to less than 5/times/10/sup 5/ cm/sup /minus/2/.

• Research Organization: NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan(JP)
• OSTI ID: 5944931
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 66:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDE SOLAR CELLS
LINE DEFECTS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
RECOMBINATION
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SURFACE COATING
THIN FILMS