Efficiency calculations of thin-film GaAs solar cells on Si substrates

Journal Article · Fri Nov 01 04:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335737· OSTI ID:5282426

Yamaguchi, M; Amano, C

Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

• Research Organization: Ibaraki Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation, Tokai, Ibaraki 319-11, Japan
• OSTI ID: 5282426
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LENGTH
LINE DEFECTS
MATHEMATICAL MODELS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
THEORETICAL DATA