Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substrates

Journal Article · Sat Mar 01 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336439· OSTI ID:6313728

Yamaguchi, M; Yamamoto, A; Itoh, Y

Recombination loss at dislocations is the predominant loss mechanism in thin-film GaAs solar cells on Si substrates. Cell parameters are calculated based on a simple model in which dislocations act as recombination centers. Excellent agreement is observed between theory and experiment. It is indicated that one could fabricate thin-film GaAs solar cells with an efficiency of 17--18% on Si substrates if the dislocation density is less than 5 x 10V cm S.

• Research Organization: NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation, Tokai, Ibaraki 319--11, Japan
• OSTI ID: 6313728
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER DENSITY
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
GALLIUM ARSENIDE SOLAR CELLS
INFORMATION
LENGTH
LINE DEFECTS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATION TRANSPORT
RECOMBINATION
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT