GaAs heteroepitaxial growth on Si for solar cells

Journal Article · Mon May 09 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99058· OSTI ID:5285404

Itoh, Y; Nishioka, T; Yamamoto, A; Yamaguchi, M

Thermal annealing effects on the reduction of dislocation density in GaAs on Si substrates were investigated. The dislocation density in GaAs films grown on Si substrates by metalorganic chamical vapor deposition was reduced by in situ thermal annealing to 2 x 10/sup 6//cm/sup 2/. We have found that the cooling and heating cycle of the GaAs film is most important factor in reducing the dislocation density in thermal annealing. Solar cells fabricated using GaAs films with 5 x 10/sup 6//cm/sup 2/ etch pit density have 18% conversion efficiency for the active area under AM1.5 simulated illumination.

• Research Organization: Nippon Telegraph and Telephone Corporation, Optoelectronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 234-01, Japan
• OSTI ID: 5285404
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:19; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFFICIENCY
ELEMENTS
EPITAXY
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFORMATION
LINE DEFECTS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY