Dislocation reduction in heteroepitaxial Ge on Si using SiO{sub 2} lined etch pits and epitaxial lateral overgrowth
- Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
We report a technique that significantly reduces threading dislocations in Ge on Si heteroepitaxy. Germanium is first grown on Si and etched to produce pits in the surface where threading dislocations terminate. Further processing leaves a layer of SiO{sub 2} only within etch pits. Subsequent selective epitaxial Ge growth results in coalescence above the SiO{sub 2}. The SiO{sub 2} blocks the threading dislocations from propagating into the upper Ge epilayer. With annealed Ge films grown on Si, the said method reduces the defect density from 2.6 x 10{sup 8} to 1.7 x 10{sup 6} cm{sup -2}, potentially making the layer suitable for electronic and photovoltaic devices.
- OSTI ID:
- 22027738
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 99; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO{sub 2}
Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth
Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates
Journal Article
·
Mon Sep 13 00:00:00 EDT 2004
· Applied Physics Letters
·
OSTI ID:20632842
Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth
Journal Article
·
Sun Aug 15 00:00:00 EDT 1982
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5044259
Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates
Journal Article
·
Sun Dec 31 23:00:00 EST 1995
· Journal of the Electrochemical Society
·
OSTI ID:201383